Magneto-Coulomb oscillations in ferromagnetic single electron transistors
Magneto-Coulomb oscillations in ferromagnetic single electron transistors
复制标题
铁磁单电子晶体管中的磁库仑振荡
DOI：
10.1016/s0167-9317(99)00246-4
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发表时间：
1999
影响因子：
2.3
通讯作者：
H. Shimada
中科院分区：
文献类型：
--
作者：
Y. Ootuka;K. Ono;R. Matsuda;H. Shimada
在Ni/Co/Ni单电子晶体管（SET）中发现了零偏电阻随外磁场和栅电压的振荡行为。我们表明，在磁场中的Co岛和Ni引线的导电电子的化学势的变化引起的岛电极的自由能的变化，并诱导电阻的振荡。用该机理解释了Co/Ni/Co-、Al/Co/Al-和Al/Al/Al-SET的实验结果。
Oscillatory behavior of the zero-bias resistance as a function of the external magnetic fields as well as of the gate voltage is found in a Ni/Co/Ni single electron transistor (SET). We show that the variations of the chemical potentials for the conduction electrons in the Co island and in the Ni leads in magnetic fields cause changes in the free energy of the island electrode and induce the oscillations of the resistance. Experimental results of other structures such as Co/Ni/Co-, Al/Co/Al-and Al/Al/Al-SETs are explained consistently by this mechanism.