Unravelling the mechanism of large room-temperature magnetoresistance in silicon
Unravelling the mechanism of large room-temperature magnetoresistance in silicon
复制标题
DOI：
10.1088/0022-3727/42/18/185011
复制
发表时间：
2009-09-21
影响因子：
3.4
通讯作者：
Koopmans, B.
中科院分区：
文献类型：
--
作者：
Schoonus, J. J. H. M.;Haazen, P. P. J.;Koopmans, B.
在本实验研究中，我们证实了在掺硼Si-SiO（2）-Al结构中测得的磁阻效应源于体硅，并证明了磁场对受主波函数的非均匀挤压。与预期的磁场上的受体波函数的效果变得更强，从杂质中心的距离增加，我们表明，磁阻增加，降低掺杂浓度，虽然背景杂质在这个过程中的作用不能完全排除。当在后一种器件中使用一种非线性绝缘层代替欧姆接触时，在室温下在低掺杂硅中获得了大的恒压磁电阻（在1 MA m（-1）时MR > 1000%）。
In this experimental study, we confirm that the magnetoresistance effect measured in boron-doped Si-SiO(2)-Al structures originates from bulk silicon, and prove that the magnetic field non-uniformly squeezes the acceptor wave functions. In line with the expectation that the effect of a magnetic field on an acceptor wave function becomes stronger with increasing distance from the impurity centre, we show that the magnetoresistance increases for decreasing doping concentration, although the role of background impurities in this process cannot be completely excluded. When using an ultrathin insulating layer instead of ohmic contacts in the latter devices, large constant-voltage magnetoresistances (MR > 1000% at 1 MA m(-1)) are obtained in low-doped silicon at room temperature.