Evaluation of Polycrystalline-Si<sub>1-X</sub>Ge<sub>x</sub> Thin-Film Transistors Grown Laterally on a Glass Substrate Using a Continuous-Wave Laser
Evaluation of Polycrystalline-Si<sub>1-X</sub>Ge<sub>x</sub> Thin-Film Transistors Grown Laterally on a Glass Substrate Using a Continuous-Wave Laser
复制标题
使用连续波激光在玻璃基板上横向生长的多晶硅<sub>1-X</sub>Ge<sub>x</sub>薄膜晶体管的评估
DOI：
10.1149/10906.0059ecst
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Kitahara Kuninori
中科院分区：
文献类型：
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作者：
Hara Akito;Sagawa Tatsuya;Kusunoki Kotaro;Kitahara Kuninori
本研究旨在了解连续波激光横向结晶（CLC） poly-Si1-xGex tft的性能。n-ch CLC - si - xgex tft的转移特性表明，随着Ge浓度的增加，阈值电压与CLC - si - tft相比向正方向移动。CLC - n-ch poly-Si1-xGex tft的特性可以用受体的形成来解释。对于p-ch tft， CLC poly-Si - xgex tft的转移特性比CLC poly-Si tft表现出更大的变化。p-ch平行CLC - si1 - xgex tft的离子/ off比很小，并且与栅极长度的关系很弱。相比之下，p-ch垂直CLC poly-Si1-xGex tft在长栅极长度下表现出较大的离子/ off值。p-ch CLC poly-Si1-xGex tft的离子/离合比根据平行或垂直以及长或短栅极长度的变化可以解释为沿晶界的Ge偏析，导致沿晶界形成了一个高浓度的p型导电区，连接了SD区。
This study aims to understand the performance of continuous-wave laser lateral crystallization (CLC) poly-Si1-xGex TFTs. The transfer characteristics of n-ch CLC poly-Si1-xGex TFTs revealed that the threshold voltages shifted in the positive direction compared with those of CLC poly-Si TFTs with increasing Ge concentration. The characteristics of CLC n-ch poly-Si1-xGex TFTs can be explained by the formation of acceptors. For p-ch TFTs, the transfer characteristics of CLC poly-Si1-xGex TFTs exhibited a larger Ioff than those of CLC poly-Si TFTs. The Ion/Ioff ratio is small for p-ch parallel CLC poly-Si1-xGex TFTs and is weakly dependent on the gate length. In contrast, p-ch perpendicular CLC poly-Si1-xGex TFTs exhibit large Ion/Ioff values for long gate lengths. The variation in the Ion/Ioff ratio of p-ch CLC poly-Si1-xGex TFTs according to the parallel or perpendicular and long or short gate length is explained by Ge segregation along the grain boundary, resulting in the formation of a high-concentration p-type conduction region along the grain boundary, which connects the SD regions.