Interfacial engineering with NiOx nanofibers as hole transport layer for carbon-based perovskite solar cells

Interfacial engineering with NiOx nanofibers as hole transport layer for carbon-based perovskite solar cells
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DOI:
10.1016/j.solener.2021.10.039
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发表时间:
2021-12
期刊:
影响因子:
6.7
通讯作者:
S. Vijayaraghavan;Jacob Wall;Harigovind G. Menon;Xiaomeng Duan;Liping Guo;A. Amin;Xiao Han;Lingyan Kong;Yufeng Zheng;Lin Li;Feng Yan
S. Vijayaraghavan;Jacob Wall;Harigovind G. Menon;Xiaomeng Duan;Liping Guo;A. Amin;Xiao Han;Lingyan Kong;Yufeng Zheng;Lin Li;Feng Yan
中科院分区:
工程技术2区
文献类型:
--
作者:
S. Vijayaraghavan;Jacob Wall;Harigovind G. Menon;Xiaomeng Duan;Liping Guo;A. Amin;Xiao Han;Lingyan Kong;Yufeng Zheng;Lin Li;Feng Yan

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虽然钙钛矿太阳能电池(PSC)在功率转换效率(PCE)方面取得了革命性的进展,但为了实现长期稳定性和低成本的器件制造以实现器件的商业化,选择合适的空穴传输层(HTL)和负担得起的背接触对于实现高档制造仍然至关重要。然而,由于碳/钙钛矿界面的低质量,碳基钙钛矿仍然面临着进一步提高器件性能的巨大挑战。无机NiO由于其有利的能带排列、上级化学稳定性、高空穴迁移率和低成本制造而成为上级HTL候选物。为了解决碳基PSC的界面质量差的问题,我们报告电纺NiOx纤维作为有效的HTL,当部署在我们的碳基PSC中时,导致PCE的高效器件性能高达13.73%。NiO作为钙钛矿和碳对电极之间的界面层被引入,以研究其对界面改性和器件性能的影响。
Although perovskite solar cells (PSCs) have made revolutionary progress in terms of power conversion efficiency (PCE), to achieve long-term stability and low-cost device manufacturing for commercialization of the devices, selection of proper hole transport layer (HTL) and affordable back contact are still crucial to realize the upscale manufacturing. However, the carbon-based perovskite still faces great challenges to further improve the device performance due to the low quality of the carbon/perovskite interface. Inorganic NiOxis a superior HTL candidate due to its favorable energy band alignment, superior chemical stability, high hole mobility, and low-cost manufacturing. To address the poor interface quality of the carbon-based PSCs, we report electrospun NiOxfibers as an effective HTL, resulting in highly efficient device performance of PCEs up to 13.73% when deployed in our carbon-based PSCs. NiOxhas been introduced as an interfacial layer between the perovskite and the carbon counter electrode to study its impact on interfacial modification and device performance.