Investigation of polymethylmethacrylate resist residues using photoelectron microscopy
Investigation of polymethylmethacrylate resist residues using photoelectron microscopy
复制标题
使用光电子显微镜研究聚甲基丙烯酸甲酯抗蚀剂残留物
DOI：
10.1116/1.1470509
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发表时间：
2002
影响因子：
1.4
通讯作者：
I. Lindau
中科院分区：
文献类型：
--
作者：
I. Maximov;A. Zakharov;T. Holmqvist;L. Montelius;I. Lindau
用定量光电子能谱显微术研究了电子束曝光和显影后SiO_2表面上的聚甲基丙烯酸甲酯（PMMA）抗蚀剂残留物，发现正确曝光和显影后的PMMA残留物平均厚度约为1nm。较高的曝光剂量导致薄膜厚度减小，但残留物约为0.5 mn。该技术可作为电子器件工艺中表面和界面质量控制的有力工具。
Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.