Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study
Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study
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DOI：
10.1063/1.3291118
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发表时间：
2010-02-01
影响因子：
3.2
通讯作者：
Jackman, Richard B.
中科院分区：
文献类型：
--
作者：
Bevilacqua, Mose;Tumilty, Niall;Jackman, Richard B.
纳米金刚石(NCD)是使用纳米金刚石种子技术生长的，导致这种材料的致密形式，其颗粒尺寸约为100纳米。用阻抗谱和霍尔效应测量方法研究了本征和轻掺硼NCD的电学性质。对于本征材料，晶界和颗粒本身最初对记录的与频率相关的阻抗值有贡献。然而，边界导电性可以被去除，并且薄膜变得高度电阻。有趣的是，这些薄膜的交流性能也很好，在频率高达10兆赫时，介电损耗值接近0.004。因此，这些NCD薄膜的介电性能与高质量的大颗粒多晶金刚石薄膜一样好。对于掺硼材料，当载流子浓度在10(17)cm(-3)左右时，可以得到具有良好载流子迁移率(10-50 cm(2)/V S)的p型材料。
Nanocrystalline diamond (NCD) has been grown using a nanodiamond seeding technique, leading to a dense form of this material, with grain sizes around 100 nm. The electrical properties of both intrinsic and lightly boron-doped NCD have been investigated using impedance spectroscopy and Hall effect measurements. For intrinsic material, both grain boundaries and grains themselves initially contribute to the frequency dependant impedance values recorded. However, boundary conduction can be removed and the films become highly resistive. Interestingly, the ac properties of these films are also excellent with a dielectric loss value similar to 0.004 for frequencies up to 10 MHz. The dielectric properties of these NCD films are therefore as good as high quality large grain polycrystalline diamond films. In the case of boron-doped material, p-type material with good carrier mobility values (10-50 cm(2)/V s) can be produced at carrier concentrations around 10(17) cm(-3).