Angular-resolved energy distribution of secondary ions emitted from a silicon target sputtered by a xenon ion beam
Angular-resolved energy distribution of secondary ions emitted from a silicon target sputtered by a xenon ion beam
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氙离子束溅射硅靶材发射的二次离子的角分辨能量分布
DOI：
10.1007/bf00324085
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
J. Aubert
中科院分区：
文献类型：
--
作者：
C. Pellet;C. Desgranges;C. Schwebel;J. Aubert
本文报道了在溅射靶发射粒子角分辨能量分布实验装置上获得的初步结果。研究了一次能量为10 keV的氙离子轰击硅靶时产生的二次离子。在其低能量部分，分布在8 eV附近达到最大值，然后根据E−1定律减小。在200 - 1000 eV范围内，出现第二个极大值，其高度取决于发射角。除了这个范围之外，角分布具有类似余弦平方的形状。相反，能量在200 eV和1000 eV之间的离子的角分布指向靠近离子束的镜面反射方向的前向方向。它被假定为对应于两个离子群体的测量离子：根据线性级联理论溅射的二次离子和反冲硅靶离子。
This paper reports preliminary results obtained on an experimental apparatus dedicated to the study of angular resolved energy distribution of particles emitted from a sputtered target. Secondary ions emitted during the bombardment of a silicon target by xenon ions at a primary energy of 10keV have been studied. In its low energy part the distribution reaches a maximum around 8eV, and then decreases according to an E−1 law. In the range 200eV to 1000eV, a second maximum appears whose height depends on the emission angle. Apart from this range, the angular distributions have a cosine square-like shape. On the contrary, the angular distribution of ions with energy between 200eV and 1000eV is pointed in a forward direction near the specular reflection direction of the ion beam. It is assumed that the measured ions correspond to two ionic populations: secondary ions sputtered according to the linear cascade theory and recoil silicon target ions.