Experimental Results Obtained using Extreme Ultraviolet Laboratory Tool at New SUBARU
Experimental Results Obtained using Extreme Ultraviolet Laboratory Tool at New SUBARU
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在新斯巴鲁使用极紫外线实验室工具获得的实验结果
DOI：
10.1143/jjap.39.6771
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发表时间：
2000
影响因子：
1.5
通讯作者：
Takeo Watanabe
中科院分区：
文献类型：
--
作者：
H. Kinoshita;Takeo Watanabe
我们设计了符合 0.1 µm 代光刻规范的三非球面镜光学器件，并正在开发适用于器件制造实验的极紫外光刻 (EUVL) 实验室工具。它的工作波长为13.5 nm，采用数值孔径为0.1的三镜成像系统。它能够在30毫米×1毫米尺寸的曝光场中复制65纳米的图案。首先，使用 New SUBARU 的同步辐射 (SR) 源研究单层化学放大抗蚀剂。从灵敏度曲线可以看出，正型光刻胶DP603和负型光刻胶SAL601具有高伽玛值，并且对极紫外曝光波长具有高灵敏度。此外，还进行了使用三非球面镜成像系统的曝光实验。在10mm×1mm的曝光面积中展示了56nm的最小线宽。我们证实三非球面镜成像系统对于开发EUVL技术是有用的。
We have designed three-aspherical-mirror optics that meets the specifications for 0.1 µm generation lithography, and are developing an extreme ultraviolet lithography (EUVL) laboratory tool suitable for device fabrication experiments. It operates at a wavelength of 13.5 nm and employs a three-mirror imaging system with a numerical aperture of 0.1. It is capable of replicating 65 nm patterns in an exposure field of 30 mm×1 mm size. First, single-layer chemically amplified resists are investigated using the synchrotron radiation (SR) source of New SUBARU. From the sensitivity curve, it was found that the positive-tone resist DP603 and the negative-tone resist SAL601 have high gamma values and high sensitivities to the extreme ultraviolet exposure wavelength. Furthermore, exposure experiments using the three-aspherical mirror imaging system were performed. A minimum line width of 56 nm was demonstrated in an exposure area of 10 mm×1 mm. We confirmed that the three-aspherical mirror imaging system is useful for developing EUVL technology.