Optical anisotropy in semipolar (Al,In)GaN laser waveguides
Optical anisotropy in semipolar (Al,In)GaN laser waveguides
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半极性 (Al,In)GaN 激光波导中的光学各向异性
DOI：
10.1002/pssc.200983646
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
A. Hangleiter
中科院分区：
文献类型：
--
作者：
W. Scheibenzuber;U. Schwarz;R. Veprek;B. Witzigmann;A. Hangleiter
本文计算了半极性(Al，In)GaN激光二极管的光学本征模。为了正确考虑纤锌矿晶体双折射的影响，采用了全矢量一维4×4传输矩阵方法。根据激光波导相对于c轴的取向，本征模表现为TE/TM-或异常/普通偏振。本征模的偏振方向对激光器的性能至关重要，因为它决定了光学增益的相关带间矩阵元素。(2010Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
In this work, the optical eigenmodes of a semipolar (Al,In)GaN laser diode are calculated. A full vectorial one‐dimensional 4×4 transfer matrix method is used to correctly incorporate the influence of birefringence of the wurtzite crystal. Depending on the orientation of the laser waveguide relative to the c‐axis, the eigenmodes show TE/TM‐ or extraordinary/ordinary polarization. The polarization direction of the eigenmodes is crucial for the performance of the laser, as it determines the relevant interband matrix elements for the optical gain. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)