Selective Dual-Ion Modulation in Solid-State Magnetoelectric Heterojunctions for In-Memory Encryption.
Selective Dual-Ion Modulation in Solid-State Magnetoelectric Heterojunctions for In-Memory Encryption.
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DOI：
10.1002/smll.202206824
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发表时间：
2023-01
期刊：
影响因子：
13.3
通讯作者：
Xiaoyu Ye;Xiaojian Zhu;Huali Yang;Jipeng Duan;Shuang Gao;Cui Sun;Xuerong Liu;Run-Wei Li
中科院分区：
文献类型：
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作者：
Xiaoyu Ye;Xiaojian Zhu;Huali Yang;Jipeng Duan;Shuang Gao;Cui Sun;Xuerong Liu;Run-Wei Li
纳米离子技术被认为是一种很有前途的方法来调节固态电子的物理性质，这导致了各种新兴的纳米器件，如纳米离子电阻开关器件和磁离子器件的存储器和计算应用。以往的研究主要局限于单类型离子的调控，而多类型离子对磁电耦合效应的调控研究，对于开发具有多种集成功能的信息器件仍然是一个难题。本文报道了一种基于Pt/HfO 2- x /NiOy /Ni的双离子固态磁电异质结结构，该结构具有可重构的磁电阻特性，可用于存储器加密。结果表明，氧阴离子和镍阳离子可以选择性地驱动电压与控制的极性和强度，同时改变整体电阻和界面磁耦合，从而显着调制的MR对称性。在此基础上，设计了一种具有存储器内加密功能的磁电存储器原型阵列，用于图像和数字信息的安全存储。沿着的优点，包括结构简单，多态加密，良好的可逆性，和非易失性调制能力，这种概念验证设备开辟了新的途径，下一代紧凑型电子集成信息功能。
Nanoionic technologies are identified as a promising approach to modulating the physical properties of solid-state dielectrics, which have resulted in various emergent nanodevices, such as nanoionic resistive switching devices and magnetoionic devices for memory and computing applications. Previous studies are limited to single-type ion manipulation, and the investigation of multiple-type ion modulation on the coupled magnetoelectric effects, for developing information devices with multiple integrated functionalities, remains elusive. Here, a dual-ion solid-state magnetoelectric heterojunction based on Pt/HfO2- x /NiOy /Ni with reconfigurable magnetoresistance (MR) characteristics is reported for in-memory encryption. It is shown that the oxygen anions and nickel cations can be selectively driven by voltages with controlled polarity and intensity, which concurrently change the overall electrical resistance and the interfacial magnetic coupling, thus significantly modulate the MR symmetry. Based on this device, a magnetoelectric memory prototype array with in-memory encryption functionality is designed for the secure storage of image and digit information. Along with the advantages including simple structure, multistate encryption, good reversibility, and nonvolatile modulation capability, this proof-of-concept device opens new avenues toward next-generation compact electronics with integrated information functionalities.