Bonding characterization of BC2N thin films
Bonding characterization of BC2N thin films
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DOI：
10.1063/1.116369
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发表时间：
1996-05
影响因子：
4
通讯作者：
M. Watanabe;S. Itoh;K. Mizushima;T. Sasaki
中科院分区：
文献类型：
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作者：
M. Watanabe;S. Itoh;K. Mizushima;T. Sasaki
我们研究了通过化学气相沉积制备的BC₂N薄膜的键合态，它是一种新型的层状BCN化合物。通过使用X射线光电子能谱测量1s电子的化学位移，并与石墨和六方氮化硼（h - BN）中的情况进行比较，对BC₂N薄膜中硼、碳和氮原子的化学键合态进行了研究。结果表明，该薄膜具有明显的B - C键和C - N键，且与石墨和h - BN明显不同，这表明合成了这三种元素的原子级杂化物。
We have studied the bonding states of BC2N thin films prepared by chemical vapor deposition, one of the new layered BCN compounds. The chemical bonding states of boron, carbon, and nitrogen atoms in the BC2N thin films were investigated by using x‐ray photoelectron spectroscopy to measure chemical shifts of 1s electrons, being compared with those in graphite and hexagonal (h‐) BN. The results exhibited that the thin films had significant B–C and C–N bonds and were clearly different from graphite and h‐BN, indicating that an atomic‐level hybrid of the three elements was synthesized.