Modulation‐doped InAlAs/InGaAs quantum well structures for high electron mobility transistors
Modulation‐doped InAlAs/InGaAs quantum well structures for high electron mobility transistors
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用于高电子迁移率晶体管的调制掺杂 InAlAs/InGaAs 量子阱结构
DOI：
10.1116/1.587030
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发表时间：
1994
影响因子：
1.4
通讯作者：
G. Weimann
中科院分区：
文献类型：
--
作者：
W. Klein;G. Böhm;M. Sexl;S. Grigull;H. Heiss;G. Tränkle;G. Weimann
采用固体源分子束外延技术在InP衬底上生长了调制掺杂的InAlAs/InGaAs异质结构。可重复地获得±10−3内的晶格匹配。InGaAs和InAlAs的半峰全宽分别为2和13 meV的窄光致发光线宽证明了三元化合物的高质量。传输性能也非常出色，在传统的单异质结中，二维电子气浓度为1.3×1012 cm−2时，4.2 K迁移率为84 000 cm 2/Vs。由于两个势垒中的调制掺杂，具有高载流能力的优化单量子阱结构具有4.0×1012 cm−2的片载流子浓度和28 000 cm 2/Vs的4.2 K迁移率。由这些结构加工的亚微米高电子迁移率晶体管在445 mA/s的漏电流下显示出500 mS/mm的最大载流子浓度。最大漏极电流为1120 mA/mm，截止频率为fT=118 GHz，fm...
Modulation‐doped InAlAs/InGaAs heterostructures were grown on InP substrates by solid source molecular beam epitaxy. Lattice matching within ±10−3 was reproducibly obtained. The high quality of the ternary compounds is demonstrated by narrow photoluminescence linewidths of full width at half‐maximum=2 and 13 meV for InGaAs and InAlAs, respectively. The transport properties are excellent, too, with a 4.2 K mobility of 84 000 cm2/Vs for two‐dimensional electron gas concentrations of 1.3×1012 cm−2 in conventional single heterostructures. Optimized single quantum‐well structures with high current carrying capacity due to modulation doping in both barriers have sheet carrier concentrations of 4.0×1012 cm−2 and 4.2 K mobilities of 28 000 cm2/Vs. Sub‐μm‐high electron mobility transistors processed from these structures show a maximum transconductance of 500 mS/mm at a drain current of 445 mA/mm. A very high maximum drain current of 1120 mA/mm is obtained, while maintaining cutoff frequencies of fT=118 GHz and fm...