Highly oriented perpendicular Co-alloy media on Si(111) substrates
Highly oriented perpendicular Co-alloy media on Si(111) substrates
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Si(111) 基底上的高取向垂直钴合金介质
DOI：
10.1063/1.370452
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发表时间：
1999
影响因子：
3.2
通讯作者：
D. Lambeth
中科院分区：
文献类型：
--
作者：
H. Gong;M. Rao;D. Laughlin;D. Lambeth
采用射频溅射法在HF刻蚀的Si(111)单晶衬底上外延生长了六方封闭堆积的Co颗粒垂直于膜面易轴生长的CoCrPt/Ti/Ag薄膜。通过X射线极图测量和透射电子显微镜分析确定了薄膜的取向关系为CoCrPt(0001)[1010]∥Ti(0001)[1010]∥Ag(111)[112]∥Si(111)[112].。通过引入这些单晶模板，CoCrPT薄膜的磁性能得到了很大的改善。摇摆曲线测量表明，钴合金的c轴取向有很大的改善。已经获得了用于垂直记录的高度取向、高矫直力的特性。
CoCrPt/Ti/Ag films with the easy axes of the hexagonal-closed-pack Co grains perpendicular to the film plane were epitaxially grown on HF-etched Si(111) single crystal substrates by rf sputter deposition. The orientation relationship was determined by x-ray pole figure measurements and transmission electron microscopy to be CoCrPt(0001)[1010]∥Ti(0001)[1010]∥Ag(111)[112]∥Si(111)[112]. The magnetic properties of the CoCrPt films were greatly improved by introducing these single crystal templates. Rocking curve measurement showed a greatly improved c-axis orientation of the cobalt alloy. Highly oriented, high coercivity properties for perpendicular recording have been obtained.