Surface plasmon coupling effect in an InGaN∕GaN single-quantum-well light-emitting diode
Surface plasmon coupling effect in an InGaN∕GaN single-quantum-well light-emitting diode
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DOI：
10.1063/1.2802067
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发表时间：
2007-10
影响因子：
4
通讯作者：
Dong-Ming Yeh;Chi-Feng Huang;Cheng-Yen Chen;Yen-Cheng Lu;Chih-Chung Yang
中科院分区：
文献类型：
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作者：
Dong-Ming Yeh;Chi-Feng Huang;Cheng-Yen Chen;Yen-Cheng Lu;Chih-Chung Yang
作者演示了InGaN闪烁GaN单量子阱发光二极管（LED）中量子阱（QW）与p型侧附近产生的表面等离子体激元（SP）之间的耦合效应。当与弱QW-SP耦合或显著SP能量损失的LED样品相比时，QW-SP耦合导致为QW-SP耦合设计的LED样品中的电致发光（EL）强度的增强和SP能量泄漏的减少。在QW-SP耦合显著的LED样品中，观察到光致发光和EL发射光谱的蓝移，表明这种耦合过程的重要特征之一。通过使用用于SP产生的n型侧可以改善器件性能，使得可以减小器件电阻并且由于n型层中的较高载流子浓度可以增强QW-SP耦合效应（通过进一步减小QW与金属之间的距离）。
The authors demonstrate the coupling effects between the quantum well (QW) and surface plasmon (SP) generated nearby on the p-type side in an InGaN∕GaN single-QW light-emitting diode (LED). The QW-SP coupling leads to the enhancement of the electroluminescence (EL) intensity in the LED sample designed for QW-SP coupling and reduced SP energy leakage, when compared to a LED sample of weak QW-SP coupling or significant SP energy loss. In the LED samples of significant QW-SP coupling, the blueshifts of the photoluminescence and EL emission spectra are observed, indicating one of the important features of such a coupling process. The device performance can be improved by using the n-type side for SP generation such that the device resistance can be reduced and the QW-SP coupling effect can be enhanced (by further decreasing the distance between the QW and metal) because of the higher carrier concentration in the n-type layer.