Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition
Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition
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金属有机化学气相沉积在 (111) GaAs 上外延生长立方 GaN
DOI：
10.1007/bf02659677
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发表时间：
1995
影响因子：
2.1
通讯作者：
D. Pavlidis
中科院分区：
文献类型：
--
作者：
C. Hong;K. Wang;D. Pavlidis
我们报道了通过低压金属有机化学气相沉积在（111）GaAs衬底上生长的立方GaN的结构特性的首次全面研究。发现（111）GaN的x射线衍射（XRD）峰的半峰最小全宽度（FWHM）为~ 12 min。低温氮化镓缓冲液的使用有助于降低XRD的FWHM。横断透射电镜（XTEM）显示，GaN薄膜中存在宽度为500A数量级的柱状结构。界面处的选择区域电子衍射（SAD）图证实了立方（111）GaN与（111）GaAs衬底在平面内生长。高分辨透射电镜（HRTEM）显示，GaN在（111）A GaAs衬底上的界面特性优于GaN在（111）B GaAs衬底上的界面特性。
We are reporting the first comprehensive investigation of the structural properties of cubic GaN grown on (111) GaAs substrates by low-pressure metalorganic chemical vapor deposition. The minimum full width at half maximum (FWHM) of the x-ray diffraction (XRD) peak of (111) GaN was found to be ∼12 min. The use of low temperature GaN buffers helps to reduce the FWHM of the XRD. Cross-sectional transmission electron microscopy (XTEM) revealed the presence of columnar structures in the GaN film with widths of the order of 500A. Selected area electron diffraction (SAD) patterns at the interface confirmed that cubic (111) GaN was grown in-plane with the (111) GaAs substrate. Highresolution transmission electron microscopy (HRTEM) showed that the interface characteristics of GaN on (111)A GaAs substrate were better than those of the GaN on (lll)B GaAs substrate.