GaAs/AlAs coupled multilayer cavity structures for terahertz emission devices
GaAs/AlAs coupled multilayer cavity structures for terahertz emission devices
复制标题
用于太赫兹发射器件的 GaAs/AlAs 耦合多层腔结构
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
T. Isu
中科院分区：
文献类型：
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作者：
T. Kitada;Fumiya Tanaka;Tomoya Takahashi;K. Morita;T. Isu
提出了GaAs/AlAs耦合多层腔结构作为太赫兹辐射器件。当两个腔层通过中间分布布拉格反射器多层膜耦合时，可以实现在太赫兹区域具有光频差的两个腔模。利用超短脉冲激光器同时注入两束腔模光，证明了腔模增强光场之间的干涉。这种耦合的多层腔结构是有前途的，作为紧凑的和室温下可操作的太赫兹发射器件的基础上的差频产生的腔模式光。
GaAs/AlAs coupled multilayer cavity structures are proposed as terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region can be realized when two cavity layers are coupled by an intermediate distributed Bragg reflector multilayer. Interference between the enhanced light fields of the cavity modes has been demonstrated by the simultaneous injection of two cavity-mode lights using an ultrashort pulse laser. Such coupled multilayer cavity structures are promising for use as compact and room temperature operable terahertz emission devices based on difference frequency generation by the cavity-mode lights.
影响因子：
3.8
作者：
Belkin, Mikhail A.;Fan, Jonathan A.;Linfield, Edmund H.
通讯作者：
Linfield, Edmund H.