Hole traps and Cu-related shallow donors in ZnO nanorods revealed by temperature-dependent photoluminescence.
Hole traps and Cu-related shallow donors in ZnO nanorods revealed by temperature-dependent photoluminescence.
复制标题
DOI：
10.1039/c3cp50764e
复制
发表时间：
2013-05
期刊：
影响因子：
--
通讯作者：
Haiping He;Shuili Li;Luwei Sun;Z. Ye
中科院分区：
文献类型：
--
作者：
Haiping He;Shuili Li;Luwei Sun;Z. Ye
这项工作为纳米棒中的空穴陷阱参与复合和改变铜相关绿色发射的热猝灭提供了积极的实验证据。随温度变化的光致发光还表明了铜杂质在退火过程中的演化以及与铜有关的浅施主的形成，其能级为∼0.11 eV。
This work presents positive experimental evidence for the hole traps in ZnO nanorods, which take part in recombination and change the thermal quenching of Cu-related green emission. The evolution of Cu impurity upon annealing, as well as the formation of Cu-related shallow donors with an energy level of ∼0.11 eV are also indicated by temperature-dependent photoluminescence.