Spherical SiGe quantum dots prepared by thermal evaporation
Spherical SiGe quantum dots prepared by thermal evaporation
复制标题
热蒸发法制备球形SiGe量子点
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
C. Chia
中科院分区：
文献类型：
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作者：
Yu;Shih;Si‐Chen Lee;C. Chia
采用热蒸发法制备了球形的SiGe合金量子点。对这些网点的形状和结构进行了研究。透射电子显微镜图像显示，它们的平均直径约为15 nm，其核心为结晶。这些点的组成可以从硅到声子的拉曼峰位置提取出来。
SiGe alloy quantum dots with spherical shape have been synthesized by the thermal evaporation method. The shape and structure of these dots have been investigated. Transmission electron microscopy images show that they have an average diameter of about 15 nm, and their cores are crystalline. The composition of these dots could be extracted from the Raman peak position of the silicon TO phonon.