Direct observation of single dopant atom in light-emitting phosphor of β-SiAlON:Eu2+
Direct observation of single dopant atom in light-emitting phosphor of β-SiAlON:Eu2+
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DOI：
10.1063/1.3076110
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发表时间：
2009-01-26
影响因子：
4
通讯作者：
Hirosaki, Naoto
中科院分区：
文献类型：
--
作者：
Kimoto, Koji;Xie, Rong-Jun;Hirosaki, Naoto
稀土掺杂氮化物因其作为发光材料的应用而备受关注。掺杂剂在晶体中的原子位置对先进材料的发展非常重要。在这里，我们用扫描电子显微镜(STEM)直接观察到了发光材料β-SiAlON中单一的Eu掺杂原子。STEM环形暗场图像表明，Eu掺杂以β-Si3N4结构存在于连续的原子沟道中。通过实验和模拟结果的比较，确定了单一Eu掺杂的图像对比度。
Rare-earth doped nitride attracts considerable attention because of its application as a light-emitting phosphor. The atomic site of dopants in a crystal is important for the development of advanced materials. Here, we directly observe a single Eu dopant atom in phosphor beta-SiAlON using scanning transmission electron microscopy (STEM). A STEM annular dark-field image reveals that a Eu dopant exists in a continuous atomic channel in a beta-Si3N4 structure. The image contrast of the single Eu dopant is confirmed based on the comparison of experimental and simulation results.