Scaling growth kinetics of self-induced GaN nanowires
Scaling growth kinetics of self-induced GaN nanowires
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DOI：
10.1063/1.3701591
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发表时间：
2012-04-09
影响因子：
4
通讯作者：
Riechert, Henning
中科院分区：
文献类型：
--
作者：
Dubrovskii, Vladimir G.;Consonni, Vincent;Riechert, Henning
我们提出了一个动力学模型，说明为什么分子束外延合成的自诱导氮化镓纳米线服从标度生长规律。我们的模型从阶梯流动、径向增长和阴影效应的动力学考虑来解释结垢行为。纳米线长度L和半径R随时间分别为[1 + C(t - t(0))]（alpha/(alpha+1)）和[1 + C(t - t(0))]（1/(alpha+1)）。因此，长度随半径的变化而变化，L与r成正比。在我们的条件下，功率指数等于2.46。这种缩放行为对于理解纳米线的自诱导生长以及调整其形态以达到所需的性能至关重要。(C) 2012年美国物理研究所。[http://dx.doi.org/10.1063/1.3701591]
We present a kinetic model showing why self-induced GaN nanowires synthesized by molecular beam epitaxy obey the scaling growth laws. Our model explains the scaling behavior from kinetic considerations of the step flow radial growth and the shadow effect. The nanowire length L and radius R scale with time as [1 + C(t - t(0))](alpha/(alpha+1)) and [1 + C(t - t(0))](1/(alpha+1)), respectively. Consequently, the length scales with the radius as L proportional to R-alpha. The power index alpha equals 2.46 in our conditions. This scaling behavior is paramount for understanding the self-induced growth of nanowires in general as well as for tuning their morphology to the desired properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701591]