Scanning tunnelling microscopic investigations of electroformed planar metal-insulator-metal diodes
Scanning tunnelling microscopic investigations of electroformed planar metal-insulator-metal diodes
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DOI：
10.1080/00207219008920287
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发表时间：
1990-07
影响因子：
1.3
通讯作者：
H. Pagnia;N. Sotnik;W. Wirth
中科院分区：
文献类型：
--
作者：
H. Pagnia;N. Sotnik;W. Wirth
用扫描隧道显微镜研究了具有压控负阻的电铸金属-绝缘体-金属二极管。在施加在样品上的不同电压下，同时记录地形和电位分布。微缝中的急剧电势下降表明了一种层模型，层之间有载流细丝。势降附近的物质输运可能是存在热点的迹象。
Electroformed metal-insulator-metal diodes showing voltage controlled negative resistance are investigated with a scanning tunnelling microscope. The topography and the potential distribution are recorded simultaneously at various voltages applied across the sample. The sharp potential drop in the microslit suggests a layer model with current carrying filaments between the layers. Material transport in the vicinity of the potential drop may be an indication of the existence of hot spots.