A photonic interconnect layer on CMOS

A photonic interconnect layer on CMOS
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DOI:
10.1049/ic:20070223
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发表时间:
2007
期刊:
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影响因子:
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通讯作者:
D. Thourhout;J. V. Campenhout;P. Rojo-Romeo;P. Regreny;C. Seassal;P. Binetti;X. Leijtens;R. Nötzel;M. Smit;L. Cioccio;C. Lagahe;J. Fedeli;R. Baets
D. Thourhout;J. V. Campenhout;P. Rojo-Romeo;P. Regreny;C. Seassal;P. Binetti;X. Leijtens;R. Nötzel;M. Smit;L. Cioccio;C. Lagahe;J. Fedeli;R. Baets
中科院分区:
其他
文献类型:
--
作者:
D. Thourhout;J. V. Campenhout;P. Rojo-Romeo;P. Regreny;C. Seassal;P. Binetti;X. Leijtens;R. Nötzel;M. Smit;L. Cioccio;C. Lagahe;J. Fedeli;R. Baets

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我们提出并演示了一种由异质微盘激光器和微探测器组成的光子互连层,其中集成了纳米光子硅波导电路。光子层是使用晶片规模的工艺和芯片到晶片的分子键合工艺制造的。
We propose and demonstrate a photonic interconnect layer consisting of heterogeneous microdisk lasers and microdetectors integrated with a nanophotonic silicon waveguide circuit. The photonic layer is fabricated using waferscale processes and a die-to-wafer molecular bonding process.