Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strains
Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strains
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Si pMOSFET 压缩和拉伸应变下 NBTI 退化行为的实验研究
DOI：
10.1109/led.2014.2325032
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发表时间：
2014
影响因子：
4.9
通讯作者：
Yi Zhao
中科院分区：
文献类型：
--
作者：
Wangran Wu;Chang Liu;Jiabao Sun;Wenjie Yu;Xi Wang;Yi Shi;Yi Zhao
在这封信中，我们通过实验研究了四种类型的应变（单轴拉伸应变、单轴压缩应变、双轴拉伸应变和双轴压缩应变）对 Si pMOSFET 负偏压温度不稳定性 (NBTI) 退化行为的影响。使用晶圆弯曲系统施加应变，以避免因应变工程而对 NBTI 特性产生加工影响。我们首次通过实验证实，单轴和双轴压缩应变对于 Si pMOSFET 的 NBTI 改进都是有利的。然而，NBTI 可靠性在单轴和双轴拉伸应变下都会降低。这些结果不能仅通过考虑应变引起的栅极漏电流变化来解释。还必须考虑界面处载流子和 Si-H 键之间相互作用的应变诱导调制。
In this letter, we experimentally investigated the effects of four types of strains, uniaxial tensile strain, uniaxial compressive strain, biaxial tensile strain, and biaxial compressive strain, on the negative bias temperature instability (NBTI) degradation behaviors of Si pMOSFETs. The strains were applied using a wafer bending system to avoid processing effects on the NBTI characteristics as a result of strain engineering. We confirm experimentally, for the first time, that both uniaxial and biaxial compressive strains are advantageous in terms of the NBTI improvement in Si pMOSFETs. However, the NBTI reliability was degraded under both uniaxial and biaxial tensile strains. These results could not be explained by considering only the gate leakage current change due to the strain. The strain-induced modulation of the interaction between the carriers and Si-H bonds at the interface must also be considered.