CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
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DOI：
10.1063/1.111832
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发表时间：
1994-03-28
影响因子：
4
通讯作者：
SENOH, M
中科院分区：
文献类型：
--
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
研制了发光强度大于1 cd的坎德拉级高亮度InGaN/AlGaN双异质结蓝光发光二极管。作为有源层，Zn掺杂的InGaN层用于DH LED。在室温下，正向电流为20 mA时，典型输出功率为1500 μ W，外量子效率高达2.7%.其电致发光的峰值波长和半峰全宽分别为450和70 nm。这个发光强度的值是有史以来报道的蓝色LED的最高值。
Candela-class high-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped InGaN layer was used for the DH LEDs. The typical output power was 1500 muW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.