Growth optimization for thick crack-free GaN layers on sapphire with HVPE
Growth optimization for thick crack-free GaN layers on sapphire with HVPE
复制标题
DOI：
10.1002/pssc.200461487
复制
发表时间：
2005-05
期刊：
影响因子：
--
通讯作者：
E. Richter;C. Hennig;H. Kissel;G. Sonia;U. Zeimer;M. Weyers
中科院分区：
文献类型：
--
作者：
E. Richter;C. Hennig;H. Kissel;G. Sonia;U. Zeimer;M. Weyers
报道了HVPE法生长无裂纹GaN厚层的优化条件。研究发现，以1：1的H2/N2混合物作为载气，表面裂纹密度最低。裂纹的形成还取决于所使用的GaN/蓝宝石模板的性质。对于通过MOVPE生长的5 μm厚GaN/蓝宝石模板，在约0.05%的中等压缩应变下获得了最佳结果。但是裂纹的形成与起始层的应变状态没有简单的依赖关系，这表明GaN的HVPE生长本身可以引入强的拉伸应变。（© 2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H2/N2 as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 µm thick GaN/sapphire templates grown by MOVPE with medium compressive strain ϵzz of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)