Mapping electrically active dopant profiles by field‐emission scanning electron microscopy
Mapping electrically active dopant profiles by field‐emission scanning electron microscopy
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通过场发射扫描电子显微镜绘制电活性掺杂剂分布
DOI：
10.1063/1.117041
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发表时间：
1996
影响因子：
4
通讯作者：
D. Houghton
中科院分区：
文献类型：
--
作者：
R. Turan;D. Perovic;D. Houghton
用场发射扫描电子显微镜(FE-SEM)研究了p型硅的二次电子(SE)图像对比度。将掺硼硅异质结构的横截面FE-SEM图像分别与二次离子质谱仪和电化学电容-电压谱测量的原子浓度和自由载流子分布进行了比较。铁-扫描电子显微镜图像对比度已被证明是电子起源的掺杂。由于电活性掺杂物种只对SE图像的对比度有贡献，FE-扫描电子显微镜可以有效地在两个维度上绘制电活性掺杂物种的轮廓，灵敏度低至1016 cm−3。
Secondary electron (SE) image contrast from p‐type silicon has been studied using field‐emission scanning electron microscopy (FE‐SEM). Cross‐sectional FE‐SEM images of boron‐doped silicon heterostructures have been compared with atomic concentration and free carrier profiles measured by secondary‐ion mass spectroscopy and electrochemical capacitance‐voltage profiling, respectively. FE‐SEM image contrast due to dopants has been shown to be electronic in origin. Since electrically active dopant species contribute solely to SE image contrast, FE‐SEM can be effectively used to map electrically active dopant profiles in two dimensions with a sensitivity as low as 1016 cm−3.