Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry
Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry
复制标题
电流垂直于平面几何结构中自旋阀巨磁阻的输出增强
DOI：
10.1063/1.1499744
复制
发表时间：
2002
影响因子：
3.2
通讯作者：
M. Sahashi
中科院分区：
文献类型：
--
作者：
H. Yuasa;M. Yoshikawa;Y. Kamiguchi;K. Koi;H. Iwasaki;M. Takagishi;M. Sahashi
在这项工作中，我们提出了一个合适的材料，金属为基础的自旋阀在电流垂直于平面（CPP）的几何形状。研究了三种自由层和钉扎层材料，即Co90Fe10，Fe50Co50，和带有半原子Cu层的Fe50Co50的AΔR（A为元件尺寸，ΔR为电阻变化）。当自由层和钉扎层为5 nm时，AΔR分别为1.0 mΩ μm2、1.6 mΩ μm2和2.9 mΩ μm2。 此外，具有Fe50Co50和半原子Cu层的双型自旋阀达到5.2m Ω μm2。 根据自由层和钉扎层厚度对AΔR的依赖关系，铁磁层和间隔层Cu界面处的自旋相关电阻主要通过从Co90Fe10到Fe50Co50的改变而增强，而插入半原子Cu层则增大了自由层和钉扎层中的自旋相关体电阻。
In this work, we present a suitable material for metal-based spin-valve in current-perpendicular-to-plane (CPP) geometry. The AΔR (A is the element size and ΔR is the change in resistance) was investigated for three kinds of free and pinned layers material, that is, Co90Fe10, Fe50Co50, and Fe50Co50 with half-atomic Cu layers. When the free and pinned layers are 5 nm, AΔR is 1.0 mΩ μm2, 1.6 mΩ μm2, and 2.9 mΩ μm2, respectively. Moreover, the dual-type spin valve having Fe50Co50 with half-atomic Cu layers achieved 5.2 mΩ μm2. According to the free and pinned layers thickness dependence of AΔR, the spin-dependent resistance at the interfaces between ferromagnetic layers and spacer Cu is enhanced mainly by changing from Co90Fe10 to Fe50Co50, and the spin-dependent bulk resistance in free and pinned layers is enlarged by inserting half-atomic Cu layers.