The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation
The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation
复制标题
高非静水压对 III-V 族半导体的影响：闪锌矿到纤锌矿结构的相变和多相生成
DOI：
10.1088/1742-6596/500/18/182032
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
R. G. Jasinevicius
中科院分区：
文献类型：
--
作者：
P. S. Pizani;R. G. Jasinevicius
利用拉曼散射技术研究了InSb、GaSb和GaAs在高压缩/解压速率的机械冲击作用下的结构相变。结果表明，是可能产生几个结构相定位在不同的微米区域的同一个样品：锌晶体可能纤锌矿结构相变和多相态的产生。
Raman scattering was employed to study structural phase transitions of InSb, GaSb and GaAs induced by highly non-hydrostatic pressures applied by mechanical impact, in which high compression/decompression rates are imposed to the sample. The results showed that is possible to produce several structural phases localized in different micrometric regions of the same sample: the zinc blende to possibly wurtzite structural phase transition and the generation of a multiphase state.