Characterizations of high-voltage vertically-stacked GaAs laser power converter
Characterizations of high-voltage vertically-stacked GaAs laser power converter
复制标题
高压垂直堆叠GaAs激光功率转换器的特性
DOI：
10.1088/1674-4926/39/9/094006
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发表时间：
2018-09-01
影响因子：
5.1
通讯作者：
Ye, Yang
中科院分区：
文献类型：
--
作者：
Huang, Jie;Sun, Yurun;Ye, Yang
采用金属有机物化学气相沉积（MOCVD）技术，设计并生长了n+-GaAs/p+-Al_（0.37）Ga_（0.63）As隧道结六结垂直叠层GaAs激光功率转换器（LPC），用于808 nm激光功率转换。在808 nm激光照射下，测量了LPC芯片的电流-电压（I-V）特性，在输入激光功率为0.5 W时，孔径为2 mm的LPC的最大转换效率ηc为53.1%。此外，采用标准等效电路模型分析了LPC的特性，通过拟合I-V曲线，提取了LPC的反向饱和电流、理想因子、串联电阻和并联电阻。
Six-junction vertically-stacked GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage (I–V) characteristics under 808 nm laser illumination, and a maximum conversion efficiency ηc of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.