Longitudinal‐optical‐phonon assisted tunneling in tunneling bi‐quantum well structures
Longitudinal‐optical‐phonon assisted tunneling in tunneling bi‐quantum well structures
复制标题
隧道双量子井结构中的纵向光学声子辅助隧道掘进
DOI：
10.1063/1.104881
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发表时间：
1991
影响因子：
4
通讯作者：
T. Fujii
中科院分区：
文献类型：
--
作者：
S. Muto;T. Inata;A. Tackeuchi;Y. Sugiyama;T. Fujii
我们讨论了在一种新的AlGaAs/GaAs超晶格结构中观察到的电子隧穿时间，隧穿双量子阱（TBQ）。为了计算非共振隧穿时间，我们进行了共振隧穿实验，以确认导带不连续性的60%规则准确地评估了电子的自由隧穿概率。我们发现，观察到的恢复时间与计算的纵向光学声子发射隧穿时间薄（≤ 10个单层）的障碍。
We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi‐quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction‐band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (≤ 10 monolayers) barriers.