Electrical characterization of transparent p-i-n heterojunction diodes
Electrical characterization of transparent p-i-n heterojunction diodes
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DOI：
10.1063/1.1413710
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发表时间：
2001-12-01
影响因子：
3.2
通讯作者：
Tate, J
中科院分区：
文献类型：
--
作者：
Hoffman, RL;Wager, JF;Tate, J
透明的p-i-n异质结二极管是用重掺杂的p型CuYO2和半绝缘的i-ZnO薄膜沉积在涂有n型氧化铟锡的玻璃衬底上制成的。观察到整流，在-4-4 V范围内，正反电流的比率高达60。正偏置电流-电压特性主要受限于空间电荷流，这归因于单载流子注入到i-ZnO层中。电容测量显示出较强的频率色散，这归因于i-ZnO陷阱。该二极管结构的总厚度为0.75 μ m，在可见光区域的光透射率为35% ~ 65%。(C) 2001年美国物理研究所。
Transparent p-i-n heterojunction diodes are fabricated using heavily doped, p-type CuYO2 and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range -4-4 V. The forward-bias current-voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 mum and an optical transmission of similar to 35%-65% in the visible region. (C) 2001 American Institute of Physics.