Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode
Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode
复制标题
DOI：
10.1088/1009-1963/15/4/009
复制
发表时间：
2006-04
期刊：
影响因子：
--
通讯作者：
Li Yan;Rui-Sheng Zheng;Yu-Chun Feng;Song-Hao Liu;Han-Ben Niu
中科院分区：
文献类型：
--
作者：
Li Yan;Rui-Sheng Zheng;Yu-Chun Feng;Song-Hao Liu;Han-Ben Niu
采用三维时域有限差分法计算了GaN基微结构平板发光二极管的正z方向相对光提取效率，其中微结构平板由石墨柱晶格组成。结果表明，二维石墨排列的柱抑制光提取。当在柱的中间存在厚柱时，该结构可以增强发光二极管的光提取。塔形柱的顶部较薄，底部较厚，当塔形柱的角度适当时，塔形柱有利于光提取。
The positive z direction relative light extraction efficiency of GaN light-emitting diodes with microstructure slab is calculated by three-dimensional finite-difference time-domain method, where the microstructure slab consists of a graphite lattice of pillars. The results show that the two-dimensional graphite-arranged pillars suppress light extraction. When there is a thick pillar in the middle of the pillars, the structure can enhance light extraction of the light-emitting diodes. The tower-like pillars, which are thin on the top of the pillars and thick on the bottom of the pillars, benefit the light extraction when the angle of the tower-like pillars is proper.