Dielectric Permittivity Changes with Magnetic Field in Iron-based Ferromagnetic Oxide Sputtered Films.
Dielectric Permittivity Changes with Magnetic Field in Iron-based Ferromagnetic Oxide Sputtered Films.
复制标题
铁基铁磁氧化物溅射薄膜中介电常数随磁场的变化。
DOI:
10.3379/jmsjmag.25.875
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发表时间:
2001
影响因子:
--
通讯作者:
T. Fujii
中科院分区:
文献类型:
--
作者:
A. Kajima;Y. Nakamura;M. Inoue;T. Fujii
The variation of the dielectric permittivity er against magnetic field H in Fe2O3-Bi2O3-PbTiO3 system thin films prepared by rf-reactive sputtering was investigated. er', the real part of er changed with H. Its maximum relative change of er', i.e. |Δer'/er'|max reached values as large as 0.12% in a wide frequency range from 1 Hz to 100 kHz, whereas its imaginary part er" did not change. Δer' vs. H curve showed hysteresis loop, which was found to be a strongly correlated phenomenon with the differential magnetic permeability dM/dH. Same experiments were also carried out for Cu-substituted Fe2O3-Bi2O3-PbTiO3 films. A small amount of Cu-substitution resulted in magnetic softening, and the decrease of |Δer'/er'|max as well.