Spin-flop led peculiar behavior of temperature-dependent anomalous Hall effect in Hf/Gd-Fe-Co
Spin-flop led peculiar behavior of temperature-dependent anomalous Hall effect in Hf/Gd-Fe-Co
复制标题
DOI：
10.1016/j.jmmm.2021.168196
复制
发表时间：
2021-06-27
影响因子：
2.7
通讯作者：
Wu, Te-ho
中科院分区：
文献类型：
--
作者：
Bhatt, Ramesh Chandra;Ye, Lin-Xiu;Wu, Te-ho
本文研究了Hf/GdFeCo/MgO薄膜和霍尔棒器件中反常霍尔效应的温度依赖性。薄膜和器件的磁补偿温度（T-comp）分别为240 K和118 K。在片状薄膜中，在相当低的场（0.6 T，接近T-comp）下见证了自旋翻转。片状薄膜中的AHE磁滞回线具有单个回线，而在霍尔棒器件中，在T-comp上方观察到由三个回线组成的磁滞回线。此外，当在记录R-AHE的同时施加垂直磁场时，温度相关的反常霍尔电阻（R-AHE）响应异常。零场R-AHE扫描表明霍尔信号仅由FeCo矩产生。然而，3 T场R-AHE扫描的行为（其中R-AHE在T-comp附近下降到接近零）似乎遵循器件的净磁化响应，通过考虑补偿温度周围的低场自旋翻转来解释。这里提供的结果为了解铁磁材料在自旋电子应用中复杂的AHE行为提供了重要的见解。
Here we investigate the temperature dependence of anomalous Hall effect in Hf/GdFeCo/MgO sheet film and Hall bar device. The magnetic compensation temperature (T-comp) for the sheet film and device is found to be similar to 240 K and similar to 118 K, respectively. In sheet film, spin-flopping is witnessed at a considerably lower field, 0.6 T, close to T-comp. The AHE hysteresis loops in the sheet film have a single loop whereas in the Hall bar device, hystereses consist of triple loops are observed just above the T-comp. Moreover, the temperature-dependent anomalous Hall resistance (R-AHE) responds unusually when a perpendicular magnetic field is applied while recording the R-AHE. The zero-field R-AHE scan suggests the Hall signal generates solely from the FeCo moment. However, the behavior of 3T-field R-AHE scan in which the R-AHE drops close to zero near the T-comp seems to be following the net magnetization response of the device, is explained by considering the low field spin-flopping around the compensation temperature. The results presented here give important insight to understand the complex AHE behavior of ferrimagnets for their spintronic applications.