Surface Reaction in Thin Film Formation of Si1-xGex Alloys on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating
Surface Reaction in Thin Film Formation of Si1-xGex Alloys on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating
复制标题
无需基材加热的电子回旋共振 Ar 等离子体化学气相沉积在 Si(100) 上形成 Si1-xGex 合金薄膜的表面反应
DOI：
10.1149/06406.0099ecst
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Shigeo Sato
中科院分区：
文献类型：
--
作者：
Naofumi Ueno;Masao Sakuraba;Shigeo Sato
IV族半导体（如Si、Si 1 − xGex和Ge）的低温外延生长工艺对于IV族半导体的量子效应纳米异质结构非常重要，特别是在异质界面处抑制混合。等离子体化学气相沉积（Plasma CVD）工艺是低温外延生长IV族半导体的候选工艺之一。Si 1 − xGex薄膜的Ge分数与GeH 4分压比非常一致。速率系数[（Si 1-xGex沉积速率）×（Ge或Si分数）/（GeH 4或SiH 4的分压（PGeH 4或PSiH 4））]倾向于随着PGeH 4的增加或PSiH 4的减少而变大。沉积速率系数的变化不仅取决于锗的含量，而且取决于沉积速率。氢结合在硅0。50Ge0。50薄膜外延生长在Si（100）是一样小的数量级的检测限的FTIR测量（约10 20 cm-3）或以下。沉积的Si 0. 50Ge0。50薄膜急剧增加，通过降低GeH 4和SiH 4分压即沉积速率。还可以确认Si/Si 1 − xGex/Si（100）量子异质结构的外延生长没有应变弛豫。从这些结果来看，我们的ECR Ar等离子体CVD工艺有望适用于量子异质结构的形成，特别是抑制混合。
Low-temperature epitaxial growth process of group IV semiconductors (eg Si, Si1− xGex and Ge) is important for quantum-effect nano heterostructures of group IV semiconductors especially with suppressed intermixing at heterointerfaces. Plasma CVD process is one of the candidates for low-temperature epitaxial growth of group IV semiconductors. The Ge fraction of Si1− xGex thin film is in good agreement with the GeH4 partial pressure ratio. Rate coefficient [(Si1− xGex deposition rate)×(Ge or Si fraction)/(partial pressure of GeH4 or SiH4 (PGeH4 or PSiH4))] tends to become larger by increasing PGeH4 or decreasing PSiH4. Change of rate coefficients depends not only on Ge fraction but also on deposition rate. Hydrogen incorporated in the Si0. 50Ge0. 50 film epitaxially grown on Si (100) is as small as the order of detection limit of our FTIR measurements (about 10 20 cm-3) or below. Height of X-ray diffraction peak for the deposited Si0. 50Ge0. 50 film drastically increases by reducing GeH4 and SiH4 partial pressures ie deposition rate. Epitaxial growth of Si/Si1− xGex/Si (100) quantum heterostructure without strain relaxation can be also confirmed. From these results, our ECR Ar plasma CVD process is expected to be applicable to quantum heterostructures formation especially with suppressed intermixing.