Fabrication of an anti-reflective microstructure on sapphire by femtosecond laser direct writing

Fabrication of an anti-reflective microstructure on sapphire by femtosecond laser direct writing
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飞秒激光直写蓝宝石抗反射微结构的制备

DOI:
10.1364/ol.42.000543
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发表时间:
2017-02-01
期刊:
影响因子:
3.6
通讯作者:
Sun, Hong-Bo
Sun, Hong-Bo
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Li, Qian-Kun;Cao, Jia-Ji;Sun, Hong-Bo

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在此,我们报告了一种在蓝宝石上无掩模生产亚波长结构抗反射表面的简单方法,该表面在中红外区域具有高和宽带透射率:飞秒激光直接写入辅助湿法蚀刻。利用这种方法,在蓝宝石上制作了间距约为2 μ m、总高度近900 nm的倒金字塔和圆锥阵列。由此产生的亚波长结构极大地抑制了法向入射时的镜面反射。3和5 μ m之间的透射率测量与使用VirtualLab进行的模拟一致,并且透射率在4 μ m处达到最大值92.5%。具有亚波长结构的蓝宝石还表现出高达高的角度无关的透射率特性。θ = 60度。因此,这些蓝宝石亚波长结构在中红外光学中具有重要的技术意义,特别是对于军用中红外器件的恶劣条件适用窗口。(C)2017美国光学学会
Herein, we report a facile approach for the maskless production of subwavelength-structured antireflective surfaces on sapphire with high and broadband transmittance in the mid-IR: femtosecond laser direct writing assist with wet etching. With this method, inverted pyramid and cone arrays with a pitch of about 2 mu m and a total height of near 900 nm on the sapphire were produced. The resulting subwavelength structures greatly suppress specular reflection at normal incidence. The transmission measurements between 3 and 5 mu m are in agreement with the simulations performed using VirtualLab, and the transmittance reached a maximum value of 92.5% at 4 mu m. The sapphire with subwavelength structures also exhibits angle-independent transmittance characteristics up to a high. theta = 60 degrees. Therefore, these subwavelength structures on sapphire are of great technological importance in mid-IR optics, especially for the harsh-condition-applicable windows of military mid-IR devices. (C) 2017 Optical Society of America