Non-Planar Geometrical Effects on the Magnetoelectrical Signal in a Three-Dimensional Nanomagnetic Circuit.
Non-Planar Geometrical Effects on the Magnetoelectrical Signal in a Three-Dimensional Nanomagnetic Circuit.
复制标题
三维纳米磁电路中非平面几何效应对磁电信号的影响。
DOI：
10.1021/acsnano.0c10272
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发表时间：
2021-04-27
期刊：
影响因子：
17.1
通讯作者：
Fernández-Pacheco A
中科院分区：
文献类型：
--
作者：
Meng F;Donnelly C;Abert C;Skoric L;Holmes S;Xiao Z;Liao JW;Newton PJ;Barnes CHW;Sanz-Hernández D;Hierro-Rodriguez A;Suess D;Cowburn RP;Fernández-Pacheco A
将纳米磁学和自旋电子学扩展到三维(3D)为基础和技术研究提供了巨大的机会。然而，探索复杂的三维几何结构对磁电现象的影响带来了重要的实验和理论挑战。在这项工作中，我们研究了利用直写纳米加工技术将铁磁三维纳米器件集成到微电子电路中的磁电信号。由于电流和磁化的三维矢量性质，发生了几种磁电效应的复杂叠加。通过在三维磁场的作用下进行电学测量，结合宏观自旋模拟和有限元模拟，我们解开了叠加效应，发现三维几何结构如何导致众所周知的磁输运效应(如反常霍尔效应)的反常角度相关性。重要的是，我们的分析还揭示了3D纳米结构固有的非共线退磁场的强大作用，这导致了角度相关的磁振子磁阻对总磁电信号的强烈贡献。这些发现是理解3D自旋电子系统的关键，并为进一步的基础和基于设备的研究奠定了基础。
Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses important experimental and theoretical challenges. In this work, we investigate the magnetoelectrical signals of a ferromagnetic 3D nanodevice integrated into a microelectronic circuit using direct-write nanofabrication. Due to the 3D vectorial nature of both electrical current and magnetization, a complex superposition of several magnetoelectrical effects takes place. By performing electrical measurements under the application of 3D magnetic fields, in combination with macrospin simulations and finite element modeling, we disentangle the superimposed effects, finding how a 3D geometry leads to unusual angular dependences of well-known magnetotransport effects such as the anomalous Hall effect. Crucially, our analysis also reveals a strong role of the noncollinear demagnetizing fields intrinsic to 3D nanostructures, which results in an angular dependent magnon magnetoresistance contributing strongly to the total magnetoelectrical signal. These findings are key to the understanding of 3D spintronic systems and underpin further fundamental and device-based studies.
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影响因子：
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通讯作者：
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