Reversible transition of filamentary and ferroelectric resistive switching in BaTiO3/SmNiO3 heterostructures
Reversible transition of filamentary and ferroelectric resistive switching in BaTiO3/SmNiO3 heterostructures
复制标题
BaTiO3/SmNiO3 异质结构中丝状和铁电电阻开关的可逆转变
DOI：
10.1039/d0tc00676a
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发表时间：
2020
影响因子：
6.4
通讯作者：
Duan Chun-Gang
中科院分区：
文献类型：
--
作者：
Liu Yan-Dong;Hu Chuan-Zhu;Wang Jin-Jin;Zhong Ni;Xiang Ping-Hua;Duan Chun-Gang
最近，电阻开关（RS）现象因其具有前景的特性而被广泛研究，这有利于在下一代信息技术中实现。然而，具有不同机制的多种电阻状态的器件却很少被报道，这对于应用来说是理想的。在目前的工作中，在通过脉冲激光沉积制造的 BaTiO3/SmNiO3 (BTO/SNO) 异质结构中发现了顺时针和逆时针 RS 行为的共存。两种 RS 行为的机制分别被证明为由于铁电极化反转而导致的势垒轮廓调制以及由于 VO 的迁移而导致的导电丝的形成/断裂。已清楚地观察到三非易失性电阻状态，并且已证实它们之间的可逆转变。此外，仅通过改变电刺激电压幅度而不改变极性，实现了突触特性、成对脉冲促进和成对脉冲抑制的初步模拟。我们在此报告的研究结果为设计下一代新颖设备提供了新的思路。
Recently, resistive switching (RS) phenomena have been widely studied for their promising properties, which are favorable to be implemented in the next-generation information technology. However, devices with multiple resistance states originating from different mechanisms, which are desirable for applications, have seldom been reported. In the current work, a coexistence of clockwise and counterclockwise RS behaviors has been found in BaTiO3/SmNiO3 (BTO/SNO) heterostructures, which have been fabricated by pulsed laser deposition. The mechanisms for the two RS behaviors were demonstrated as barrier profile modulations due to ferroelectric polarization reversal and formation/rupture of the conductive filament due to the migration of VO, respectively. Tri-nonvolatile resistance states have been clearly observed, and a reversible transition between them has been confirmed. Furthermore, preliminary simulations of synapse characteristics, paired-pulse facilitation and paired-pulse depression were realized by only varying the electric stimulation voltage amplitude and not the polarity. Our findings reported here shed new light on designing next-generation novel devices.