Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals
Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals
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DOI：
10.1063/1.117548
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发表时间：
1996-10-28
影响因子：
4
通讯作者：
Roukes, ML
中科院分区：
文献类型：
--
作者：
Cleland, AN;Roukes, ML
我们报告的方法来制造纳米尺度的机械结构，从散装，单晶硅基板。以前开发的技术需要更复杂的制造方法和使用湿化学处理的底切步骤。我们的方法不需要中间掩模层的低压化学气相沉积，并且处理中的最后步骤使用干法蚀刻技术，避免了当湿法处理机械精细或大纵横比结构时从表面张力效应遇到的困难。使用这种技术，我们演示了机械谐振器的制造，其基本谐振频率为70.72 MHz，品质因数为2 × 10（4）。(C)1996年美国物理研究所。
We report on a method to fabricate nanometer scale mechanical structures from bulk, single-crystal Si substrates. A technique developed previously required more complex fabrication methods and an undercut step using wet chemical processing. Our method does not require low pressure chemical vapor deposition of intermediate masking layers, and the final step in the processing uses a dry etch technique, avoiding the difficulties encountered from surface tension effects when wet processing mechanically delicate or large aspect ratio structures. Using this technique, we demonstrate fabrication of a mechanical resonator with a fundamental resonance frequency of 70.72 MHz and a quality factor of 2 x 10(4). (C) 1996 American Institute of Physics.