Cobalt-substituted SnO2 thin films:: A transparent ferromagnetic semiconductor
Cobalt-substituted SnO2 thin films:: A transparent ferromagnetic semiconductor
复制标题
DOI：
10.1063/1.2204328
复制
发表时间：
2006-06-15
影响因子：
3.2
通讯作者：
Chaudhary, Sujeet
中科院分区：
文献类型：
--
作者：
Gopinadhan, K.;Pandya, Dinesh K.;Chaudhary, Sujeet
在喷雾热解法生长的Sn_（0.9）Co_（0.1）O_（2-δ）薄膜中观察到最大室温铁磁矩为0.47 μ（B）/Co离子。该薄膜具有高电导率（类似于150 Ω（-1）cm（-1））和类似于70%的可见光区透射率。研究了Sn_（1-x）CoxO_（2-δ）（0.05
A maximum room temperature ferromagnetic moment of 0.47 mu(B)/Co ion has been observed in Sn0.9Co0.1O2-delta films grown by spray pyrolysis. The films have high conductivity (similar to 150 Omega(-1) cm(-1)) and similar to 70% transmittance in the visible region. A systematic variation of saturation magnetization, carrier concentration, electrical conductivity, and optical transmission edge in Sn1-xCoxO2-delta (0.05