Growth, characterization, and properties of nanographene.
Growth, characterization, and properties of nanographene.
复制标题
DOI：
10.1002/smll.201101827
复制
发表时间：
2012-05
期刊：
影响因子：
13.3
通讯作者：
Wei Yang;Congli He;Lianchang Zhang;Yi Wang;Zhiwen Shi;Meng Cheng;Guibai Xie;Duoming Wang;
中科院分区：
文献类型：
--
作者：
Wei Yang;Congli He;Lianchang Zhang;Yi Wang;Zhiwen Shi;Meng Cheng;Guibai Xie;Duoming Wang;
报道了直接在二氧化硅衬底上生长纳米茂铁的系统研究。生长是在远程等离子体增强化学气相沉积系统中进行的，温度在550°C左右，以甲烷气体为碳源。原子力显微镜用于表征纳米层的形貌，拉曼光谱、X射线光电子能谱和扫描隧道显微镜用于表征纳米层样品的面内sp(2)键结构。测量了4K以下不同温度下的电输运性质，研究了隧道效应、电荷中性点的最小电导、方块电阻和不同沟道长度下的狄拉克点位置。此外，从透射谱可以看出，纳米茂铁薄膜具有较高的透过率。纳米器件是由波纹结构制成的，在应变计传感器应用方面显示出巨大的前景。
A systematic study on nanographene grown directly on silicon dioxide substrates is reported. The growth is carried out in a remote plasma-enhanced chemical vapor deposition system at a low temperature of around 550 °C with methane gas as the carbon source. Atomic force microscopy is used to characterize the nanographene morphology, and Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy are exploited to identify the in-plane sp(2) bonding structures of nanographene samples. Electrical transport properties are measured at various temperatures down to 4 K. Tunneling effects, minimal conductance at the charge-neutral point, sheet resistances, and Dirac point position at different channel lengths are investigated. In addition, nanographene film possesses high transmittance properties, as indicated by transmittance spectra. Nanographene devices are fabricated from rippled structures, and show great promise for strain-gauge sensor applications.