Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
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同位素富集硅 28 中注入铋的电激活和电子自旋共振测量
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Thomas Schenkel
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文献类型：
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作者：
C. Weis;C. Lo;C. Lo;V. Lang;A. Tyryshkin;Richard George;Kin Man Yu;J. Bokor;S. Lyon;J. Morton;Thomas Schenkel
我们对同位素富集硅 28 中注入的铋供体进行了连续波和脉冲电子自旋共振测量。供体通过热退火以最小的扩散被电激活。铋离子注入造成的损伤在热退火过程中得到修复，窄自旋共振线宽 (Bpp=12μT) 和长自旋相干时间 (T2=0.7 ms，温度 T=8 K) 证明了这一点。结果表明，离子注入铋是硅中自旋量子位集成的有希望的候选者。
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp=12μT) and long spin coherence times (T2=0.7 ms, at temperature T=8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.