Colloquium: Topological band theory
Colloquium: Topological band theory
复制标题
DOI：
10.1103/revmodphys.88.021004
复制
发表时间：
2016-06-29
影响因子：
44.1
通讯作者：
Das, Tanmoy
中科院分区：
文献类型：
--
作者：
Bansil, A.;Lin, Hsin;Das, Tanmoy
第一性原理能带理论范式不仅在发现新的拓扑有趣的材料类别的过程中，而且在识别拓扑状态的显着特征，使理论和实验之间的直接和尖锐的对抗过程中发挥了关键作用。这篇评论首先讨论了拓扑能带理论的基础，其中涉及一层的分析和解释，以评估超出标准能带理论结构的能带结构的拓扑性质。拓扑不变量的评价方法划定，包括晶体没有反转对称性和相互作用的系统。在何种程度上理论预测的拓扑状态的属性和保护已被实验验证的讨论，包括工作拓扑晶体绝缘体，无序和相互作用驱动的拓扑绝缘体（TI），拓扑超导体，Weyl半金属相，拓扑相变。概述了新材料发现过程的成功策略。目前预测的2D和3D拓扑材料的全面调查。这包括二元，三元和四元化合物，过渡金属和f-电子材料，Weyl和3D Dirac半金属，复合氧化物，有机金属，方钴矿和反钙钛矿。还包括2D原子薄膜的新兴领域，除了各种元素及其合金的石墨烯之外，功能薄膜，多层系统和3D TI的薄膜，所有这些都具有令人兴奋的广泛应用前景。本次学术讨论会的结论给出了一个研究方向的角度，进一步的工作将广泛受益于拓扑材料领域。
The first-principles band theory paradigm has been a key player not only in the process of discovering new classes of topologically interesting materials, but also for identifying salient characteristics of topological states, enabling direct and sharpened confrontation between theory and experiment. This review begins by discussing underpinnings of the topological band theory, which involve a layer of analysis and interpretation for assessing topological properties of band structures beyond the standard band theory construct. Methods for evaluating topological invariants are delineated, including crystals without inversion symmetry and interacting systems. The extent to which theoretically predicted properties and protections of topological states have been verified experimentally is discussed, including work on topological crystalline insulators, disorder and interaction driven topological insulators (TIs), topological superconductors, Weyl semimetal phases, and topological phase transitions. Successful strategies for new materials discovery process are outlined. A comprehensive survey of currently predicted 2D and 3D topological materials is provided. This includes binary, ternary, and quaternary compounds, transition metal and f-electron materials, Weyl and 3D Dirac semimetals, complex oxides, organometallics, skutterudites, and antiperovskites. Also included is the emerging area of 2D atomically thin films beyond graphene of various elements and their alloys, functional thin films, multilayer systems, and ultrathin films of 3D TIs, all of which hold exciting promise of wide-ranging applications. This Colloquium concludes by giving a perspective on research directions where further work will broadly benefit the topological materials field.