Progressive Development of Superjunction Power MOSFET Devices
Progressive Development of Superjunction Power MOSFET Devices
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DOI：
10.1109/ted.2007.911344
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发表时间：
2008
影响因子：
3.1
通讯作者：
Yu Chen;Y.C. Liang;G. Samudra;Xin Yang;K. Buddharaju;Hanhua Feng
中科院分区：
文献类型：
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作者：
Yu Chen;Y.C. Liang;G. Samudra;Xin Yang;K. Buddharaju;Hanhua Feng
最早提出的具有交叉型p-n柱的超结功率MOSFET结构因其更高的电压阻断能力和更低的比导通电阻而得到高度认可。然而，在实践中，由于制造工艺的限制，特别是对于低额定电压下具有小p-n列宽度的器件，由于难以形成完美的电荷平衡p-n柱，SJ器件的性能受到了极大的限制。最近开发的多晶硅侧翼和氧化物旁路的SJ MOSFET结构是为了克服传统的SJ器件制造限制。首次报道了将这些最新报道的器件结构扩展到适用于SJ功率集成电路的横向SJ结构的后续进展。本文详细描述了几种SJ MOSFET结构的发展和技术进步，并给出了模拟和实验结果。
The originally proposed superjunction (SJ) power MOSFET structure with interdigitated p-n columns is highly recognized for its higher voltage-blocking capability and lower specific on -state resistance. However, in practice, the performance of SJ devices is greatly handicapped due to difficulties in the formation of perfect charge-balanced p-n columns by the limitation of fabrication process technology, particularly, for devices with small p-n column widths at low voltage ratings. Recently developed structures of polysilicon-flanked and oxide-bypassed SJ MOSFETs are to overcome the conventional SJ device fabrication limitation. The follow-up development on extending the scope of these recently reported device structures to lateral SJ structures, which is suitable for SJ power integrated circuits, is reported for the first time. In this paper, detailed descriptions of the progressive development and the technical advancement of several SJ MOSFET structures are presented with both simulation and experimental results.