Fine structure and spin quantum beats in InP quantum dots in a magnetic field
Fine structure and spin quantum beats in InP quantum dots in a magnetic field
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DOI：
10.1103/physrevb.66.235312
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发表时间：
2002-12-15
影响因子：
3.7
通讯作者：
Masumoto, Y
中科院分区：
文献类型：
--
作者：
Yugova, IA;Gerlovin, IY;Masumoto, Y
本文报道了磁场中单层InP自组装量子点的光致发光动力学中观察到的量子拍子。研究发现，只有在外加偏压去除量子点中的多余电荷后，才会出现拍频现象。量子拍子与磁场分裂的激子精细结构态的干涉有关。研究了拍频特性与磁场强度和取向的关系。基于模型自旋哈密顿量的理论分析使我们能够充分描述信号的振荡分量的形状。我们测定了电子g因子分量的值，估算了空穴g因子的扩散和平均值，以及电子-空穴交换分裂参数。
The paper reports on quantum beats observed in the photoluminescence kinetics of a single layer of the InP self-assembled quantum dots in a magnetic field. It is found that the beats arise only after removal of excess charges from the quantum dots by an external electrical bias. The quantum beats are shown to be related to the interference of the excitonic fine-structure states split by the magnetic-field. The dependences of the beat characteristics on the magnetic-field strength and orientation are studied. Theoretical analysis based on a model spin Hamiltonian has allowed us to describe adequately the shape of the oscillating component of the signal. We have determined the values of the electron g-factor components and estimated the spread and the mean value of the hole g factor, as well as of the electron-hole exchange splitting parameters.