Nucleation of pentacene on silicon dioxide at hyperthermal energies
Nucleation of pentacene on silicon dioxide at hyperthermal energies
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DOI：
10.1063/1.1990254
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发表时间：
2005-07-18
影响因子：
4
通讯作者：
Engstrom, JR
中科院分区：
文献类型：
--
作者：
Killampalli, AS;Schroeder, TW;Engstrom, JR
已经用原子力显微镜研究了在超高温能量下发生的并五苯在二氧化硅上的成核。并五苯分子的入射动能强烈影响吸附过程——吸附概率随着入射能量的增加而降低，表明捕获介导的吸附。此外，并五苯的捕获概率随着掠射角的增加而降低，这一结果与所谓的正常能量缩放不一致。对亚单层状态中岛密度对生长速率的依赖性的分析表明，所有能量下的生长都与包含四个分子的临界簇一致。 (c) 2005 年美国物理研究所。
The nucleation of pentacene on silicon dioxide, incident at hyperthermal energies, has been investigated with atomic force microscopy. The incident kinetic energy of the pentacene molecules strongly influences the process of adsorption-the adsorption probability decreases with increasing incident energy, indicative of trapping-mediated adsorption. In addition, the trapping probability of pentacene decreases with more glancing angles of incidence, a result inconsistent with so-called normal energy scaling. Analysis of the dependence of the island density on the growth rate in the submonolayer regime indicates that growth at all energies is consistent with a critical cluster containing four molecules. (c) 2005 American Institute of Physics.