Transport properties of icosahedral Al70Pd22.5Re7.5 quasicrystals
Transport properties of icosahedral Al70Pd22.5Re7.5 quasicrystals
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二十面体Al70Pd22.5Re7.5准晶的输运特性
DOI：
10.1088/0953-8984/15/44/008
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
S. T. Lin
中科院分区：
文献类型：
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作者：
Y. Kuo;J. Lai;Chih;C. Lue;S. T. Lin
我们报告了二十面体 Al70Pd22.5Re7.5 准晶在 10 至 300?K 温度范围内的电和热传输特性，包括电阻率 (?)、塞贝克系数 (S) 和导热率 (?)。研究了电阻率比范围为 10.2 至 84.4 的 4 个 Al70Pd22.5Re7.5 样品。所有样品的与温度相关的电阻率随着温度的降低而增加，表现出类似半导体的行为。在整个温度范围内，大样本（和 84.4）的塞贝克系数为正值，而在低于约 120°K 的小样本（和 19.4）中，S 值变为负值。在赝能隙场景中可以定性地理解对塞贝克系数的显着依赖性。这些材料的热导率的温度变化非常相似，在我们研究的温度范围内，其值小于2.5?W?m?1?K?1。该系统的无量纲热电品质因数（ZT）估计比传统热电材料小两个数量级。
We report the electrical and thermal transport properties, including electric resistivity (?), Seebeck coefficient (S) and thermal conductivity (?) of icosahedral Al70Pd22.5Re7.5 quasicrystals in the temperature range between 10 and 300?K. Four Al70Pd22.5Re7.5 samples with a resistivity ratio ranging from 10.2 to 84.4 were studied. The temperature-dependent resistivities increase with decreasing temperature for all samples, exhibiting a semiconductor-like behaviour. The Seebeck coefficients are positive for the large- samples ( and 84.4) in the entire temperature range, while S-values become negative for the small- samples ( and 19.4) below about 120?K. The significant dependence on of the Seebeck coefficient can be qualitatively understood in the pseudogap scenario. The temperature variation of the thermal conductivity for these materials is quite similar, with values less than 2.5?W?m?1?K?1 in the temperature range we investigated. The dimensionless thermoelectric figure of merit (ZT) of this system is estimated to be two orders of magnitude smaller than that of conventional thermoelectric materials.
二元Cd-Yb准晶及其近似的热电性能
DOI：
--
发表时间：
2002
期刊：
Jpn. J. Appl. Phys. 41
影响因子：
--
作者：
H.Takayanagi;K.Nitta S.Ishikawa;J.Nakamura;R.Yagi;L.Zhu;S.Yamanaka;H.Fukuoka;H.Fukuoka;K.Tanigaki;D.H.Chi;Y.Ren;G.M.Kalvius;M.Nakajima;D.Huo;K.Miyamoto;M.Koyama;H.Sato;K.Yamamoto;T.Fukunaga;T.Fujiwara;折茂慎一;J.Nakamura;T.Oguchi;T.Takasaki;H.Takagiwa;H.Takagiwa;S.Kobayashi;H.Tou;K.Shimada;H.Sato;G.Goll;T.Sasakawa;T.Goto;Y.Echizen;Y.Muro
通讯作者：
Y.Muro