Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels
Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels
复制标题
采用深能级补偿的半绝缘衬底的 GaAs MESFET 漏极电流瞬态的二维模拟
DOI：
10.1109/16.297727
复制
发表时间：
1994
影响因子：
3.1
通讯作者：
Y. Fuseya
中科院分区：
文献类型：
--
作者：
K. Horio;Y. Fuseya
在半绝缘衬底中具有深施主“EL2”的 GaAs MESFET 的漏极电流瞬态在 t=10/sup -13/ 至 10/sup 2/ s 范围内进行仿真。结果表明，在漏极阶跃响应中，存在“准稳态”，其中深施主不响应电压变化并且漏极电流暂时变得恒定。当深施主开始捕获或发射电子时，漏极电流开始逐渐减少或增加，达到真正的稳态值。 “准稳态”和稳态之间的 I-V 曲线有很大不同。因此，半绝缘衬底中的深施主可能是漏极电流漂移和 I-V 曲线滞后的原因。还研究了引入 p 缓冲层的效果。结论是，使用低受主密度半绝缘衬底并结合引入p缓冲层可有效地最小化不利现象并利用GaAs MESFET的高性能。 >
Drain-current transients of GaAs MESFET's with deep donors "EL2" in the semi-insulating substrate are simulated in the range t=10/sup -13/ to 10/sup 2/ s. It is shown that in the drain step responses, there exists a "quasi-steady state" where the deep donors do not respond to the voltage change and the drain currents become constant temporarily. The drain currents begin to decrease or increase gradually when the deep donors begin to capture or emit electrons, reaching real steady-state values. I-V curves are quite different between the "quasi-steady state" and the steady state. Therefore, the deep donors in the semi-insulating substrate can be causes of drain-current drifts and hysteresis in I-V curves. Effects of introducing a p-buffer layer are also studied. It is concluded that the use of a low acceptor density semi-insulating substrate combined with introducing a p-buffer layer is effective to minimize the unfavorable phenomena and to utilize high performances of GaAs MESFET's. >