Analysis of pentacene field effect transistor as a Maxwell-Wagner effect element
Analysis of pentacene field effect transistor as a Maxwell-Wagner effect element
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DOI：
10.1063/1.2372433
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发表时间：
2006-12-01
影响因子：
3.2
通讯作者：
Iwamoto, Mitsumasa
中科院分区：
文献类型：
--
作者：
Tamura, Ryousuke;Lim, Eunju;Iwamoto, Mitsumasa
并五苯场效应晶体管（FET）被分析为麦克斯韦-瓦格纳效应元件。由于Maxwell-Wagner效应，从源极注入的载流子在并五苯和SiO2-栅绝缘体之间的界面处积累。然后，它们通过源极和漏极之间形成的电场而沿着FET沟道传送。漏极电流I-ds表现出取决于电场力的特征行为。注入载流子的渡越时间和充电时间是确定由麦克斯韦-瓦格纳效应控制的FET特性的关键参数。结果还表明，我们的并五苯FET的特性很好地解释了基于目前的理论分析。(c)2006年，美国物理学会。
The pentacene field effect transistor (FET) is analyzed as a Maxwell-Wagner effect element. As a result of the Maxwell-Wagner effect, carriers injected from source electrode are accumulated at the interface between pentacene and SiO2-gate insulator. They are then conveyed along the FET channel by the electric field formed between source and drain electrodes. The drain current I-ds shows characteristic behavior depending on the force of the electric field. The transit time and charging time of injected carriers are key parameters to specify FET characteristics ruled by the Maxwell-Wagner effect. Results also show that our pentacene FET characteristics are well explained based on the present theoretical analysis. (c) 2006 American Institute of Physics.