Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
复制标题
直接在 Si 上生长的室温连续波电注入 InGaN 基激光器
DOI：
10.1038/nphoton.2016.158
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发表时间：
2016-09-01
期刊：
影响因子：
35
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Sun, Yi;Zhou, Kun;Yang, Hui
硅光子学将极大地受益于在室温(1，2)下电驱动的高效、可见的片上光源。为了充分利用大规模、低成本制造工厂的优势，直接在Si3-5上生长直接带隙III-V半导体激光器是非常可取的。在这里，我们报道了一种直接在硅上生长的蓝紫(413 Nm)InGaN基激光二极管，它在室温下采用连续波电流注入，阈值电流密度为4.7kA cm(-2)。在Si衬底上异质外延生长GaN时，无论是晶格常数还是热膨胀系数都存在较大的失配，常常导致高密度的缺陷甚至微裂纹网络。通过在Si和GaN之间插入Al组分分级的AlN/AlGaN多层缓冲层，我们不仅成功地消除了裂纹的形成，而且有效地降低了位错密度。其结果是在硅上实现了蓝紫色的InGaN激光器。
Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature(1,2). To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si3-5. Here, we report the demonstration of a blue-violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm(-2). The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AIN/AIGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue-violet InGaN-based laser on Si.